Title :
Characterization of CuInSe2 thin films prepared by ion-beam sputtering
Author :
Zheng, Zhuang-Hao ; Fan, Ping ; Zhang, Dong-Ping ; Cai, Xing-Min ; Liang, Guang-Xing
Author_Institution :
Inst. of Thin Film Phys. & Applic., Shenzhen Univ., Shenzhen, China
Abstract :
CuInSe2 (CIS) thin films were prepared by ion-beam sputtering at different substrate temperatures. The films prepared at room temperature were annealed at different temperatures. Films annealed at appropriate temperatures are dense, uniform and of single-phase.
Keywords :
annealing; copper compounds; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; sputtered coatings; ternary semiconductors; CIS thin films; CuInSe2; annealing; ion-beam sputtering; single-phase thin films; substrate temperature; temperature 293 K to 298 K; Annealing; Computational Intelligence Society; Copper; Optical films; Photovoltaic cells; Sputtering; Substrates; Surface morphology; Temperature; X-ray scattering; Annealing; CIS; Ion-beam sputtering; Substrate temperature;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292427
