Title :
Buffer layer effects on properties of ZnTe for terahertz device application
Author :
Guo, Qixin ; Nakao, Yuki ; Kadoguchi, Yoshiki ; Ding, Yaliu ; Tanaka, Tooru ; Nishio, Mitsuhiro ; Tani, Masahiko ; Hangyo, Masanori
Author_Institution :
Synchrotron Light Applic. Center, Saga Univ., Saga, Japan
Abstract :
The influence of ZnTe low-temperature buffer layer on crystal quality and surface morphology of ZnTe layers grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy was investigated. It was found that both the crystal quality and surface morphology of the ZnTe layers can be improved by introducing the buffer layer with a suitable thickness between the epilayer and the substrate.
Keywords :
II-VI semiconductors; MOCVD; MOCVD coatings; buffer layers; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; zinc compounds; (0001) sapphire substrate; Al2O3; MOVPE; ZnTe; buffer layer effects; crystal quality; metalorganic vapor phase epitaxy; surface morphology; terahertz device application; zinc telluride epilayer; Buffer layers; Crystals; Epitaxial growth; Epitaxial layers; Lattices; Submillimeter wave devices; Substrates; Surface morphology; Temperature; Zinc compounds; MOVPE; ZnTe; buffer layer; crystal quality;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292429
