DocumentCode
1976511
Title
The Distributed Oscillator : A Solution for Power GaAs IMPATT Combining
Author
Archambault, Y.
Author_Institution
THOMPSON-CSF - DTE - 78140 - VELIZY - FRANCE
fYear
1979
fDate
17-20 Sept. 1979
Firstpage
576
Lastpage
579
Abstract
Multidiode distributed oscillators allow combining several high power GaAs Impatt diodes in a compact module. According to this principle, the diodes are strongly coupled to a low-Q resonant circuit. The modes and resonant frequencies depend heavily upon the diode reactances. The flat cavity combiner which is described involves special techniques for suppressing unwanted parasitic modes without absorbing power on the desired TM 010 mode. A four diode structure delivers 5 W around 10 GHz, with a nearly 100% power adding efficiency and a 400 MHz locking bandwidth for a 10 dB gain. At Ku band, power combining of six 2.5 W nominal GaAs diodes inside a dielectric circular cavity, is presented.
Keywords
Bandwidth; Coupling circuits; Diodes; Gain; Gallium arsenide; Impedance; Oscillators; RLC circuits; Resonance; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1979. 9th European
Conference_Location
Brighton, UK
Type
conf
DOI
10.1109/EUMA.1979.332770
Filename
4131412
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