Linewidth enhancement factor of 6.1-µm quantum cascade laser at near room-temperature

Author

Ishihara, M. ; Morimoto, T. ; Furuta, S. ; Kasahara, K. ; Akikusa, N. ; Fujita, K. ; Edamura, T.

Author_Institution

Dept. of Photonics, Ritsumeikan Univ., Kusatsu, Japan

fYear

2009

fDate

30-3 Aug. 2009

Firstpage

1

Lastpage

2

Abstract

The linewidth enhancement factor (alpha) of a quantum cascade laser near room-temperature and its current dependence were investigated. The alpha, probably affected by the detuning, was still smaller than that of conventional semiconductor laser diodes.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser tuning; quantum cascade lasers; semiconductor quantum wells; spectral line breadth; InGaAs-InAlAs; detuning; distributed-feedback laser; linewidth enhancement factor; quantum cascade laser; semiconductor laser diodes; wavelength 6.1 mum; Chemical lasers; Coils; Current measurement; Diode lasers; Lenses; Phonons; Photonics; Quantum cascade lasers; Semiconductor lasers; Wavelength measurement; Quantum cascade laser; distributed-feedback laser; linewidth enhancement factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-3829-7

Electronic_ISBN

978-1-4244-3830-3

Type

conf

DOI

10.1109/CLEOPR.2009.5292431

Filename

5292431