مرکز منطقه ای اطلاع رساني علوم و فناوري - OMVPE-Grown Pseudomorphic (AIxGa1-x)0.5ln0.5P/lnGaAs-MODFET Structures: Growth Procedure and Hall Properties

DocumentCode :

1976569

Title :

OMVPE-Grown Pseudomorphic (AI_xGa_1-x)_0.5ln_0.5P/lnGaAs-MODFET Structures: Growth Procedure and Hall Properties

Author :

Bachem, K.H. ; Fekete, D. ; Pletschen, W. ; Winkler, K.

Author_Institution :

Fraunhofer Inst. of Applied Solid State Physics, Germany

fYear :

1992

fDate :

8-11 Jun 1992

Firstpage :

149

Lastpage :

150

Keywords :

Artificial intelligence; Doping; Electron mobility; Gallium arsenide; Hall effect; Indium gallium arsenide;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN :

0-87942-652-7

Type :

conf

DOI :

10.1109/MOVPE.1992.664988

Filename :

664988

Link To Document :