Title :
Comparative Study of Bipolar, FET and Gunn X Band Oscillators
Author :
Fache, M. ; Quentel, M.
Author_Institution :
LIGNES TELEGRAPHIQUES ET TELEPHONIQUES - Microwave Department - B.P.No 578702 CONFLANS SAINTE HONORINE - France.
Abstract :
Solid state oscillators are widely used in microwave equipments and users are becoming more and more hard to please especially where reliability and spectral purity are concerned. The progress recently accomplished in the development of bipolar si transistors with a maximum oscillation frequency greater than 12 GHz enables us to consider the realization of bipolar transistor sources and VCO for X band. The author described the realization of an original 10 GHz miniaturized bipolar VCO with a particular low frequency noise level (less than 90 dB at 50 KHz from the carrier in a 1 Hz bandwidth). The performances of this device are enumerated and compared to those of more traditional devices : Gunn oscillators and FET - AsGa oscillators.
Keywords :
Bipolar transistors; Frequency; Gunn devices; Low-frequency noise; Microwave FETs; Microwave devices; Microwave oscillators; Microwave transistors; Solid state circuits; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 1979. 9th European
Conference_Location :
Brighton, UK
DOI :
10.1109/EUMA.1979.332648
