DocumentCode :
1976849
Title :
The Effects of Oxygen Impurity in TMA on AIGaAs Layers Grown by MOVPE
Author :
Hata, Masaharu ; Takata, H. ; Yako, T. ; Fukuhara, N. ; Maeda, T. ; Uemura, Yuuki
Author_Institution :
Tsukuba Research Laboratory, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
151
Lastpage :
151
Keywords :
Artificial intelligence; Atomic layer deposition; Atomic measurements; Epitaxial growth; Epitaxial layers; Impurities; Oxygen;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664989
Filename :
664989
Link To Document :
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