Title :
Gate drive circuit for normally on type GaN FET
Author :
Yoshida, Takafumi ; Umegami, Hirokatsu ; Hatttori, Fumiya ; Yamamoto, Manabu ; Yamaguchi, Akira
Author_Institution :
Shimane Univ., Matsue, Japan
Abstract :
In this paper, the novel gate drive circuit with a positive supply is proposed. This gate drive circuit realizes the switching drive with a positive supply. Hence, a negative supply isn´t required to drive depression-type GaN FETs. And also, the high speed switching is achieved, the rise time is 9.6ns and fall time is 28.0ns respectively. Furthermore, the validity of the gate drive circuit is verified from the experimental point of view.
Keywords :
III-V semiconductors; driver circuits; gallium compounds; power MOSFET; switching convertors; wide band gap semiconductors; GaN; gate drive circuit; high speed switching; normally on type GaN FET; positive supply; switching drive; time 28.0 ns; time 9.6 ns; Capacitors; Field effect transistors; Ions; Logic gates; Resistance; Silicon; Switches;
Conference_Titel :
Electric Power Equipment - Switching Technology (ICEPE-ST), 2013 2nd International Conference on
Conference_Location :
Matsue
DOI :
10.1109/ICEPE-ST.2013.6804367
