A Dual-Band Low Noise Amplifier in Enhancement-mode GaAs pHEMT Technology

Author

Wang, Shih-Ming ; Chen, Cheng-Chung ; Yang, Li-Chun

Author_Institution

Dept. of RF Commun. Syst. Technol., Ind. Technol. Res. Inst., Taipei

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

This paper describes a dual-bands low noise amplifier design for WCDMA and WiMAX applications. The low-noise amplifier (LNA) is implemented with the proposed dual-band matching network that consists of a high-pass and low-pass ladder. The LNA is fabricated in 0.5 um enhancement- mode pHEMT (E-mode pHEMT) technology for high linearity and low noise application. The measured noise figures (NF) and insertion gains (S21) are 1.2 dB and 16.1 dB at WCDMA band, 1.45 dB and 15.1 dB at WiMAX band. With 3-V supply voltage and 28.8-mW power consumption, the input third order intercept points (IIP3) are 6.5 dBm and 8.9 dBm for WCDMA and WiMAX, respectively.

Keywords

WiMax; code division multiple access; high electron mobility transistors; low noise amplifiers; WCDMA application; WiMAX band; code division multiple access; dual-band low noise amplifier; dual-band matching network; high electron mobility transistor; high-pass ladder; insertion gain; low-pass ladder; noise figures; pHEMT technology; Dual band; Gain measurement; Gallium arsenide; Linearity; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; PHEMTs; WiMAX; Enhancement-mode; dual-band; low noise amplifier; pHEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554847

Filename

4554847