Title :
An active MOS diode with Vth-cancellation for RFID rectifiers
Author :
Rabén, Hans ; Borg, Johan ; Johansson, Jonny
Author_Institution :
Dept. of Comput. Sci. & Electr. & Space Eng., Lulea Univ. of Technol., Luleå, Sweden
Abstract :
An active MOS diode for low voltage and low power RFID rectifiers is presented. The diode is based on the technique with internal threshold cancellation (ITC) for MOS diodes and uses a simple control scheme to minimize the diode reverse leakage so that full threshold cancellation is achieved. A theoretical background that illustrates the limitations with the ITC diode and a detailed presentation of the proposed diode with a short design procedure is included. The proposed diode is implemented in AMS 0.35 μm CMOS and simulated in Cadense Spectre in a single diode rectifier. With a diode voltage ranging from 50 to 100 mV, the proposed diode simultaneously demonstrates improved voltage and power conversion efficiency of more than 20 % each for frequencies up to 1 MHz, as compared to the MOS diode with internal threshold cancellation.
Keywords :
CMOS integrated circuits; low-power electronics; radiofrequency identification; rectifiers; semiconductor diodes; AMS; CMOS; ITC diode; active MOS diode; cadense spectre; detailed presentation; diode reverse leakage; diode voltage; internal threshold cancellation; low power RFID rectifiers; low voltage RFID rectifiers; power conversion efficiency; short design procedure; single diode rectifier; size 0.35 mum; theoretical background; voltage 50 mV to 100 mV; voltage conversion efficiency; CMOS integrated circuits; Light emitting diodes; Logic gates; Power conversion; Radiofrequency identification; Schottky diodes; Threshold voltage; CMOS; RFID; active diode; power conversion efficiency; rectifier; reverse leakage; threshold cancellation;
Conference_Titel :
RFID (RFID), 2012 IEEE International Conference on
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4673-0329-3
DOI :
10.1109/RFID.2012.6193056
