Title :
High orientation InN growth on oxide buffer layer by metal-organic molecular beam epitaxy
Author :
Kuo, Shou-Yi ; Lai, Fang-I ; Chen, Wei-Chun ; Lin, Woei-Tyng ; Hsiao, Chien-Nan ; Liu, Yu-Kai ; Shen, Ji-Lin
Abstract :
High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; semiconductor growth; InN; high orientation growth; lattice-mismatched III-V heteroepitaxial systems; metal-organic molecular beam epitaxy; near-infrared emission peak; oxide buffer layer; Buffer layers; III-V semiconductor materials; Indium; Molecular beam epitaxial growth; Photonic band gap; Pulsed laser deposition; Radio frequency; Substrates; Transistors; Zinc oxide; Heteroepitaxial; Indium nitride; MOMBE;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292468
