DocumentCode
1977465
Title
A Low Pressure Gas Ionization Sensor Using Freestanding Gold Nanowires
Author
Sadeghian, Ramin Banan ; Kahrizi, Mojtaba
Author_Institution
Concordia Univ., Montreal
fYear
2007
fDate
4-7 June 2007
Firstpage
1387
Lastpage
1390
Abstract
Freestanding gold nanowires (AuNWs) were grown by electrochemically filling the nanoscale pores of anodic aluminum oxide (AAO) membranes, and removing the membrane selectively. The array of vertically-aligned AuNWs was used at one of the electrodes of a capacitor-like gas ionizing cell, while the counter electrode was a polished silicon wafer coated with aluminum. The field enhancement property of high aspect-ratio AuNWs was employed to reduce the gaseous breakdown voltage (Vb) at room temperature. The device was operated in low-pressure gas to study the effect of AuNWs on pre-breakdown current, and tested in sub-torr argon, where it demonstrated considerable reduction in the breakdown voltage compared to uniform field conditions. The effect of nanowire polarity on Vb and the pre-breakdown discharge current was also studied.
Keywords
aluminium; electric breakdown; gas sensors; ionisation; nanowires; silicon; aluminum coating; anodic aluminum oxide membranes; aspect ratio; electrochemically filling; field enhancement property; freestanding gold nanowires; gaseous breakdown voltage; low pressure gas ionization sensor; nanoscale pores; nanowire polarity; polished silicon wafer; pre breakdown current; sub torr argon; Aluminum oxide; Biomembranes; Counting circuits; Electrodes; Filling; Gas detectors; Gold; Ionization; Nanowires; Silicon; Field enhancement effect; Freestanding gold nanowires; Gas ionization sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2007. ISIE 2007. IEEE International Symposium on
Conference_Location
Vigo
Print_ISBN
978-1-4244-0754-5
Electronic_ISBN
978-1-4244-0755-2
Type
conf
DOI
10.1109/ISIE.2007.4374803
Filename
4374803
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