Concurrent analysis of self-heating effect and thermal stress in partially insulated field effect transistors (PiFETs)

A coupled electro-thermal-mechanical analysis of partially insulated field-effect transistors (PiFETs) is performed using the proposed hybrid nonlinear finite element method (FEM) with temperature-dependent parameters rigorously treated. The two major structures of PiFET, namely the partially insulating oxide (PiOX) under the drain and source (PUSD) and partially insulating oxide under the channel (PUC) structures are thoroughly studied. For comparison, the normal MOSFET and SOI FET are also investigated. The study of self-heating effect (SHE) in these devices indicates that the PiFET is more thermally efficient than conventional SOI device. Moreover, to fully investigate the SHE and SHE induce thermal stress, different choices of parameters related to PiOX are further studied and discussed.