Leakage Current Analysis of Nitride Based Optoelectronics by Emission Microscopy Inspection

Author

Chiou, Yu-Zung ; Ko, Tsun-Kai ; Wang, Chun-Kai ; Lin, Tien-Kun ; Lin, Kuan-Wei

Author_Institution

Dept. of Electron. Eng., Southern Taiwan Univ., Tainan

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

GaN MSM photodetectors (PDs) and p-i-n photodetectors (PDs) with E-gun SiO2 passivation and plasma enhanced chemical vapor deposited (PECVD) SiO2 passivation were fabricated and characterized. Inductance couple plasma (ICP) etching would cause significant damage on GaN MSM photodetectors. The damage was proved to induce leakage current via the surface of device by using emission microscopy inspection. However, the surface damage can be partially recovered by E-gun SiO2 passivation. As for the passivation for p-i-n photodetectors, the effect is not significant in the reduction of dark current due to smaller etched area as compare to the whole area of p-i-n PDs.

Keywords

III-V semiconductors; gallium compounds; inspection; leakage currents; nitrogen; optoelectronic devices; photodetectors; plasma CVD; silicon compounds; sputter etching; E-gun SiO2 passivation; GaN; MSM photodetectors; SiO; emission microscopy inspection; inductance couple plasma etching; leakage current analysis; nitride based optoelectronics; p-i-n photodetectors; plasma enhanced chemical vapor deposition; Gallium nitride; Inspection; Leakage current; Microscopy; PIN photodiodes; Passivation; Photodetectors; Plasma applications; Plasma chemistry; Plasma devices; ICP etching; MSM; emission microscopy; p-i-n; photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554889

Filename

4554889