Title :
2-D integrated magnetic field sensor in CMOS technology
Author :
Ristic, Lj. ; Doan, M.T. ; Paranjape, M.
Author_Institution :
Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada
Abstract :
A silicon sensor capable of measuring two components of the magnetic field in the plane of chip is presented. The device is based on lateral magnetotransistor action, has two collector pairs and uses a differential approach for magnetic field sensing. It has linear response to a magnetic field, and it does not show cross-sensitivity. The relative sensitivity per channel is the range of 45%/T.<>
Keywords :
CMOS integrated circuits; electric sensing devices; elemental semiconductors; magnetic field measurement; silicon; 2-D integrated magnetic field sensor; CMOS technology; Si chip sensor; differential approach; lateral magnetotransistor action; linear response; magnetic field sensing; plane of chip; semiconductors; sensitivity per channel; two collector pairs; CMOS process; CMOS technology; Doping; Electron emission; MOSFETs; Magnetic field measurement; Magnetic sensors; Microelectronics; Voltage;
Conference_Titel :
Circuits and Systems, 1989., Proceedings of the 32nd Midwest Symposium on
Conference_Location :
Champaign, IL, USA
DOI :
10.1109/MWSCAS.1989.101951
