DocumentCode :
1977841
Title :
Influence of CCI4on lnP and on the Incorporation of Zn and Si in lnP for Chlorine Assisted Selective Area Epitaxy by AP-MOVPE
Author :
Härle, V. ; Rose, B. ; Robein, D. ; Landsbeck, E. ; Scholz, F.
Author_Institution :
Universitat Stuttgart, Germany
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
158
Lastpage :
159
Keywords :
Dielectric materials; Doping; Epitaxial growth; Epitaxial layers; Etching; Image motion analysis; Indium phosphide; Radiofrequency interference; Temperature measurement; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664993
Filename :
664993
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1977841
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