DocumentCode :
1978062
Title :
Simulation of Carbon Doping of GaAs During MOVPE
Author :
Masi, Maurizio ; Jensen, Klavs F. ; Kuech, Thomas F. ; Potemski, Robert
Author_Institution :
Department of Chemical Engineering, University of Winsconsin
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
164
Lastpage :
165
Keywords :
Carbon; Chemical engineering; Chemical technology; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Inductors; Predictive models; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664996
Filename :
664996
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1978062
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