Graphene for microelectronics: Can it make a difference?

Author

Lemme, Max C.

Author_Institution

Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

25

Lastpage

27

Abstract

Benchmarking figures for graphene show remarkable properties like ballistic conductance over several hundred nanometers or charge carrier mobilities of several 100.000 cm²/Vs [1, 2]. When graphene is integrated and processed, however, defects in the graphene and its dielectric environment dominate device performance [3, 4]. Furthermore, the lack of a band gap limits the applicability of graphene field effect transistors (GFETs) for logic applications. Yet, there are many options for graphene to make a difference in the future of microelectronics, many of which can be attributed to the “More than Moore” domain defined in the ITRS. These will be discussed in this talk.

Keywords

field effect transistors; graphene; integrated circuits; GFET; ITRS; ballistic conductance; band gap; charge carrier mobilities; device performance; dielectric environment; graphene field effect transistor; logic application; microelectronics; more-than-Moore domain; nanometer; CMOS integrated circuits; FETs; Logic gates; Nanoelectromechanical systems; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

ESSCIRC (ESSCIRC), 2012 Proceedings of the

Conference_Location

Bordeaux

ISSN

1930-8833

Print_ISBN

978-1-4673-2212-6

Electronic_ISBN

1930-8833

Type

conf

DOI

10.1109/ESSCIRC.2012.6341247

Filename

6341247