On the understanding of the effects of high pressure deuterium and hydrogen final anneal

Author

Diouf, C. ; Cros, A. ; Morin, P. ; Renard, S. ; Federspiel, X. ; Rafik, M. ; Bianchi, A. ; Rosa, J. ; Ghibaudo, G.

fYear

2012

fDate

6-7 March 2012

Firstpage

9

Lastpage

12

Abstract

A comparative study of the effects of high pressure deuterium and hydrogen final anneal (HPD2FA and HPH2FA) is for the first time performed. Effects of high pressure final anneal (HPFA) on the electronic transport is deeply investigated. Reduction of the Coulomb scattering due to interface traps and possibly oxygen vacancies is evidenced after HPFA, and the link with long and short channel transport is explicited. The reliability of the annealed devices is also briefly discussed in terms of hot carrier injection (HCI) and negative bias thermal instability (NBTI).

Keywords

annealing; deuterium; hot carriers; Coulomb scattering; annealed device; electronic transport; high pressure deuterium; high pressure final anneal; hot carrier injection; hydrogen final anneal; interface traps; negative bias thermal instability; oxygen vacancy; reliability; short channel transport; Annealing; Degradation; Deuterium; Human computer interaction; MOS devices; Reliability; Scattering; Coulomb scattering; D2; H2; HCI; HPFA; MOSFETs; NBTI; neutral defect; phonon scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193344

Filename

6193344