Title :
On the understanding of the effects of high pressure deuterium and hydrogen final anneal
Author :
Diouf, C. ; Cros, A. ; Morin, P. ; Renard, S. ; Federspiel, X. ; Rafik, M. ; Bianchi, A. ; Rosa, J. ; Ghibaudo, G.
Abstract :
A comparative study of the effects of high pressure deuterium and hydrogen final anneal (HPD2FA and HPH2FA) is for the first time performed. Effects of high pressure final anneal (HPFA) on the electronic transport is deeply investigated. Reduction of the Coulomb scattering due to interface traps and possibly oxygen vacancies is evidenced after HPFA, and the link with long and short channel transport is explicited. The reliability of the annealed devices is also briefly discussed in terms of hot carrier injection (HCI) and negative bias thermal instability (NBTI).
Keywords :
annealing; deuterium; hot carriers; Coulomb scattering; annealed device; electronic transport; high pressure deuterium; high pressure final anneal; hot carrier injection; hydrogen final anneal; interface traps; negative bias thermal instability; oxygen vacancy; reliability; short channel transport; Annealing; Degradation; Deuterium; Human computer interaction; MOS devices; Reliability; Scattering; Coulomb scattering; D2; H2; HCI; HPFA; MOSFETs; NBTI; neutral defect; phonon scattering;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193344
