DocumentCode :
1978173
Title :
In depth analysis of dopant effect on high-k metal gate effective work function
Author :
Leroux, C. ; Baudot, S. ; Charbonnier, M. ; Van Deer Geest, A. ; Caubet, P. ; Toffoli, A. ; Blaise, Ph ; Ghibaudo, G. ; Martin, F. ; Reimbold, G.
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2012
fDate :
6-7 March 2012
Firstpage :
13
Lastpage :
16
Abstract :
The impact of additives (La, Al, Mg) at the SiO2/HfO2 interface has been investigated through ab-initio simulation and electrical measurements allowing a clear analysis of their respective impact on Vt shift.
Keywords :
additives; aluminium; hafnium compounds; high-k dielectric thin films; lanthanum; magnesium; semiconductor doping; silicon compounds; Al; La; Mg; SiO2-HfO2; ab-initio simulation; additives; dopant effect; electrical measurement; high-k metal gate effective work function; high-k; metal gate; work function;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
Type :
conf
DOI :
10.1109/ULIS.2012.6193345
Filename :
6193345
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1978173
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