DocumentCode
1978204
Title
Strain engineering in suspended graphene devices for pressure sensor applications
Author
Smith, A.D. ; Vaziri, S. ; Delin, A. ; Östling, M. ; Lemme, M.C.
Author_Institution
Integrated Devices & Circuits, KTH R. Inst. of Technol., Stockholm, Sweden
fYear
2012
fDate
6-7 March 2012
Firstpage
21
Lastpage
24
Abstract
The present paper describes a device structure for controlling and measuring strain in graphene membranes. We propose to induce strain by creating a pressure difference between the inside and the outside of a cavity covered with a graphene membrane. The combination of tight-binding calculations and a COMSOL model predicts strain induced band gaps in graphene for certain conditions and provides a guideline for potential device layouts. Raman spectroscopy on fabricated devices indicates the feasibility of this approach. Ultimately, pressure-induced band structure changes could be detected electrically, suggesting an application as ultra-sensitive pressure sensors.
Keywords
Raman spectra; graphene; membranes; pressure sensors; strain control; strain measurement; C; COMSOL model; Raman spectroscopy; cavity covering; graphene membrane; potential device layout; pressure difference; pressure-induced band structure; strain control; strain engineering; strain induced band gap prediction; suspended graphene device; tight-binding calculation; ultrasensitive pressure sensor application; Cavity resonators; Films; Mathematical model; Photonic band gap; Raman scattering; Strain; Raman; device; graphene; membrane; strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location
Grenoble
Print_ISBN
978-1-4673-0191-6
Electronic_ISBN
978-1-4673-0190-9
Type
conf
DOI
10.1109/ULIS.2012.6193347
Filename
6193347
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