• DocumentCode
    1978204
  • Title

    Strain engineering in suspended graphene devices for pressure sensor applications

  • Author

    Smith, A.D. ; Vaziri, S. ; Delin, A. ; Östling, M. ; Lemme, M.C.

  • Author_Institution
    Integrated Devices & Circuits, KTH R. Inst. of Technol., Stockholm, Sweden
  • fYear
    2012
  • fDate
    6-7 March 2012
  • Firstpage
    21
  • Lastpage
    24
  • Abstract
    The present paper describes a device structure for controlling and measuring strain in graphene membranes. We propose to induce strain by creating a pressure difference between the inside and the outside of a cavity covered with a graphene membrane. The combination of tight-binding calculations and a COMSOL model predicts strain induced band gaps in graphene for certain conditions and provides a guideline for potential device layouts. Raman spectroscopy on fabricated devices indicates the feasibility of this approach. Ultimately, pressure-induced band structure changes could be detected electrically, suggesting an application as ultra-sensitive pressure sensors.
  • Keywords
    Raman spectra; graphene; membranes; pressure sensors; strain control; strain measurement; C; COMSOL model; Raman spectroscopy; cavity covering; graphene membrane; potential device layout; pressure difference; pressure-induced band structure; strain control; strain engineering; strain induced band gap prediction; suspended graphene device; tight-binding calculation; ultrasensitive pressure sensor application; Cavity resonators; Films; Mathematical model; Photonic band gap; Raman scattering; Strain; Raman; device; graphene; membrane; strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
  • Conference_Location
    Grenoble
  • Print_ISBN
    978-1-4673-0191-6
  • Electronic_ISBN
    978-1-4673-0190-9
  • Type

    conf

  • DOI
    10.1109/ULIS.2012.6193347
  • Filename
    6193347