Title :
Integrated Nanoporous Silicon Nano-explosive Devices
Author :
Du Plessis, Monuko
Author_Institution :
Univ. of Pretoria, Tshwane
Abstract :
The explosive properties of porous-silicon, impregnated with an oxidant, were researched. A porous layer structural model is proposed to model the pore and crystallite dimensions as a result of the electrochemical etching of porous silicon layers. A gravimetric experimental technique is described whereby the pore dimensions and specific surface area of porous regions can be determined, resulting in a new relationship between pore size and specific surface area. The properties of different oxidants were investigated. The filling of the pores by the oxidant is a strong function of pore size and the type of oxidant used. The experimentally observed nano-explosive Figure of Merit (FOM) is a function of the effective surface area in the porous region covered by the oxidant. It was found that there is an optimum pore size for the most energetic explosion. Future applications for this new technology are proposed.
Keywords :
etching; explosives; nanoporous materials; silicon; effective surface area; electrochemical etching; explosive properties; figure of merit; gravimetric experimental technique; integrated nanoporous silicon nanoexplosive devices; Atomic layer deposition; Conductivity; Etching; Ethanol; Explosives; Hafnium; Hydrogen; Nanoporous materials; Nanoscale devices; Silicon;
Conference_Titel :
Industrial Electronics, 2007. ISIE 2007. IEEE International Symposium on
Conference_Location :
Vigo
Print_ISBN :
978-1-4244-0754-5
Electronic_ISBN :
978-1-4244-0755-2
DOI :
10.1109/ISIE.2007.4374838