DocumentCode :
1978323
Title :
Properties of P on N Heterojunctions Made with MCT Grown by MOCVD
Author :
Oguz, S. ; Lee, D.L. ; Olson, R.J., Jr. ; Kreismanis, V.G. ; Elliot, J. ; Sullivan, E.
Author_Institution :
Raytheon Research Division, MA
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
182
Lastpage :
182
Keywords :
Charge carrier lifetime; Chemical vapor deposition; Doping; Epitaxial layers; Heterojunctions; Inductors; MOCVD; Photonic band gap; Springs; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665007
Filename :
665007
Link To Document :
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