DocumentCode :
1978329
Title :
Numerical Investigation on Thermal Characteristics of BJTs Under the Impact of an EMP
Author :
Xu, Rong-Rong ; Yin, Wen-Yan ; Mao, Jun-Fa
Author_Institution :
Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai
fYear :
2007
fDate :
11-14 Dec. 2007
Firstpage :
1
Lastpage :
4
Abstract :
Transient thermal analysis of a bipolar junction transistor (BJT) is carried out in this paper, with the hybrid finite element method (FEM) employed. The distribution and variation of the electronic field, current density, and temperature in the transistor under the impact of an electromagnetic pulse (EMP) are characterized numerically.
Keywords :
bipolar transistors; electromagnetic pulse; finite element analysis; BJT; EMP; bipolar junction transistor; current density; electromagnetic pulse; electronic field; hybrid finite element method employed; thermal characteristics; transient thermal analysis; Current density; EMP radiation effects; Finite element methods; Microwave theory and techniques; Semiconductor device reliability; Semiconductor devices; Silicon; Temperature distribution; Thermal conductivity; Thermal engineering; Hybrid FEM; bipolar junction transistor (BJT); electromagnetic pulse; temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
Type :
conf
DOI :
10.1109/APMC.2007.4554916
Filename :
4554916
Link To Document :
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