Title :
Energy capability of LDMOS as a function of ambient temperature
Author :
Basavalingappa, Adarsh ; Anumeha ; Sheu, Gene
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
Energy capability of a LDMOS device structure is shown to have nonlinear relationship with ambient temperature. Analytical model for energy capability has been discussed and is in good agreement with the simulation results. The dependency of critical temperature on ambient temperature is shown.
Keywords :
MIS devices; semiconductor device models; LDMOS device structure; ambient temperature; critical temperature; energy capability; nonlinear relationship; Analytical models; Conductivity; Heating; Silicon; Temperature; Temperature dependence; Thermal conductivity; SOA; TCAD simulation; ambient temperature; critical temperature; energy capability; laterally diffused MOS(LDMOS); thermal failure;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193358
