DocumentCode
1978402
Title
Energy capability of LDMOS as a function of ambient temperature
Author
Basavalingappa, Adarsh ; Anumeha ; Sheu, Gene
Author_Institution
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
fYear
2012
fDate
6-7 March 2012
Firstpage
65
Lastpage
68
Abstract
Energy capability of a LDMOS device structure is shown to have nonlinear relationship with ambient temperature. Analytical model for energy capability has been discussed and is in good agreement with the simulation results. The dependency of critical temperature on ambient temperature is shown.
Keywords
MIS devices; semiconductor device models; LDMOS device structure; ambient temperature; critical temperature; energy capability; nonlinear relationship; Analytical models; Conductivity; Heating; Silicon; Temperature; Temperature dependence; Thermal conductivity; SOA; TCAD simulation; ambient temperature; critical temperature; energy capability; laterally diffused MOS(LDMOS); thermal failure;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location
Grenoble
Print_ISBN
978-1-4673-0191-6
Electronic_ISBN
978-1-4673-0190-9
Type
conf
DOI
10.1109/ULIS.2012.6193358
Filename
6193358
Link To Document