Title :
Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
Author :
De Andrade, Maria Glória Caño ; Martino, João Antonio ; Aoulaiche, Marc ; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
LSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
The Low-Frequency (LF) noise in Bulk and DTMOS triple-gate FinFETs is experimentally investigated under 60 MeV proton irradiation. Moreover, the important figures of merit for the analog performance such as Early voltage and intrinsic voltage gain will be analyzed. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment.
Keywords :
MOSFET; DTMOS triple-gate FinFET; DTMOS triple-gate device; analog performance; intrinsic voltage gain; low-frequency noise behaviour; low-noise RF analog application; proton irradiaton; radiation environment; FinFETs; Logic gates; Low-frequency noise; Performance evaluation; Protons; Radiation effects; Bulk; DTMOS; low-frequency noise; proton irradiation; triple-gate;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193359
