Single electron CMOS-like one bit full adder

Author

Griveau, D. ; Ecoffey, S. ; Parekh, R.M. ; Bounouar, M.A. ; Calmon, F. ; Beauvais, J. ; Drouin, D.

Author_Institution

3IT, Univ. de Sherbrooke, Sherbrooke, QC, Canada

fYear

2012

fDate

6-7 March 2012

Firstpage

77

Lastpage

80

Abstract

This paper presents a comparative study of a one-bit-full-adder cell based on metallic complementary capacitively coupled single-electron transistors with its 22 nm CMOS counterpart. Performance and energy efficiency are investigated. The CMOS-like single-electron transistor based full adder is used in two operating mode, hysteresis and non-hysteresis. Parallel and serial single electron transistors designs are introduced. The single electron inverter consumes less than 90.4 pW while it dissipates 4.21 nW in CMOS technology.

Keywords

CMOS analogue integrated circuits; adders; single electron transistors; CMOS-like single-electron transistor; energy efficiency; metallic complementary capacitively coupled single-electron transistor; one-bit-full-adder cell; parallel single electron transistor; power 4.21 nW; serial single electron transistor; single electron inverter; size 22 nm; Adders; CMOS integrated circuits; Hysteresis; Inverters; Logic gates; Routing; Single electron transistors; Energy efficiency; full adder; hysteresis; single-electron transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193361

Filename

6193361