Title :
Single electron CMOS-like one bit full adder
Author :
Griveau, D. ; Ecoffey, S. ; Parekh, R.M. ; Bounouar, M.A. ; Calmon, F. ; Beauvais, J. ; Drouin, D.
Author_Institution :
3IT, Univ. de Sherbrooke, Sherbrooke, QC, Canada
Abstract :
This paper presents a comparative study of a one-bit-full-adder cell based on metallic complementary capacitively coupled single-electron transistors with its 22 nm CMOS counterpart. Performance and energy efficiency are investigated. The CMOS-like single-electron transistor based full adder is used in two operating mode, hysteresis and non-hysteresis. Parallel and serial single electron transistors designs are introduced. The single electron inverter consumes less than 90.4 pW while it dissipates 4.21 nW in CMOS technology.
Keywords :
CMOS analogue integrated circuits; adders; single electron transistors; CMOS-like single-electron transistor; energy efficiency; metallic complementary capacitively coupled single-electron transistor; one-bit-full-adder cell; parallel single electron transistor; power 4.21 nW; serial single electron transistor; single electron inverter; size 22 nm; Adders; CMOS integrated circuits; Hysteresis; Inverters; Logic gates; Routing; Single electron transistors; Energy efficiency; full adder; hysteresis; single-electron transistor;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193361
