Title :
Experimental investigation on direction dependence of Si (100) and Si (110) hole mobility in ultra-thin body pFETs
Author :
Kutsuki, Tomohiro ; Shimizu, Ken ; Nomura, Hirotoshi ; Saraya, Takuya ; Hiramoto, Toshihiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
The direction dependence of hole mobility in (100) and (110) UTB pFETs has been investigated experimentally using special test device structures exclusive for the direction dependence measurements. It is found that there is no direction dependence under quantum confinement in (100) UTB pFETs with SOI thickness of 5nm. On the other hand, in (110) UTB pFETs, it is shown that hole mobility superiority in <;110>; to <;100>; decreases at low temperature and in high inversion carrier density.
Keywords :
MOSFET; carrier density; elemental semiconductors; hole mobility; quantum confined Stark effect; silicon; silicon-on-insulator; SOI; Si; Si (100) hole mobility; Si (110) hole mobility; UTB pFET; direction dependence measurements; high inversion carrier density; quantum confinement; test device structures; ultra-thin body pFET; Effective mass; FETs; Logic gates; Phonons; Potential well; Scattering; Silicon; UTB MOSFET; hole moblity; phonon scattering; quantum confinement effect;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193363
