DocumentCode :
1978605
Title :
In situ SiOx interfacial layer formation for scaled ALD high-k/metal gate stacks
Author :
Dentoni Litta, E. ; Hellstrom, Per-Erik ; Henkel, C. ; Ostling, Mikael
Author_Institution :
Sch. of ICT, KTH R. Inst. of Technol., Kista, Sweden
fYear :
2012
fDate :
6-7 March 2012
Firstpage :
105
Lastpage :
108
Abstract :
This work addresses the issue of interfacial layer formation in scaled high-k/metal gate stacks: the possibility of growing a thin SiOx interfacial layer in situ in a commercial ALD reactor has been evaluated, employing ozone-based Si oxidation. Three techniques (O3, O3/H2O and Pulsed) have been developed to grow scaled sub-nm interfacial layers and have been integrated in MOS capacitors and MOSFETs. A comparison based on electrical characterization shows that the performance of the proposed in situ methods is comparable or superior to that of existing ex situ techniques; specifically, the O3 method can grow aggressively scaled interfacial layers (4-5 Å) while preserving the electrical quality of the stack.
Keywords :
MOS capacitors; MOSFET; atomic layer deposition; high-k dielectric thin films; oxidation; silicon compounds; ALD reactor; MOS capacitor; MOSFET; O3 technique; O3/H2O technique; SiOx; electrical characterization; ozone-based Si oxidation; pulsed technique; scaled ALD high-k/metal gate stack; thin SiOx interfacial layer formation; High K dielectric materials; Inductors; Logic gates; MOSFETs; Metals; Oxidation; Silicon; ALD; IL; SiOx; high-k; ozone;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
Type :
conf
DOI :
10.1109/ULIS.2012.6193368
Filename :
6193368
Link To Document :
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