DocumentCode :
1978705
Title :
The Effect of Growth Temperature Instability in the CBE Growth of lnxGa1-xAsyP1-ylnP Multiple Quantum Well Structures
Author :
Chiu, T.H. ; Williams, M.D. ; Woodward, T.K. ; Zucker, J.E. ; Sizer, T. ; Tsang, W.T. ; Storz, F.G. ; Ferguson, J.F.
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
195
Lastpage :
196
Keywords :
Chemical vapor deposition; Degradation; Diode lasers; Indium phosphide; MOCVD; Optical modulation; Quantum well devices; Superlattices; Temperature dependence; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665014
Filename :
665014
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1978705
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