Title :
The evolution of InP as a key semiconductor technology
Author :
Antypas, George A.
Author_Institution :
Crystacomm, Inc., Mountain View, CA
Abstract :
Over the past 35 years InP emerged as one of the key technologies in support of the telecommunications revolution that is still underway. This review will address the evolution of the InP crystal growth technology from its origins to the present as driven by real and hyped market demands
Keywords :
III-V semiconductors; indium compounds; semiconductor growth; InP; InP crystal growth technology; InP evolution; semiconductor technology; telecommunications revolution; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Lattices; Masers; Photonic band gap; Semiconductor lasers; Semiconductor materials; Substrates; Surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634097
