High density pseudo spin valve magnetoresistive RAM

Author

Tehrani, Saied ; Durlam, Mark ; DeHerrera, Mark ; Chen, Eugene ; Calder, John ; Kerszykowski, Gloria

Author_Institution

Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA

fYear

1998

fDate

22-24 Jun 1998

Firstpage

43

Lastpage

46

Abstract

Magnetoresistive RAM (MRAM), based on the integration of giant magnetoresistive material and Si ICs, is a nonvolatile memory technology which has unlimited read/write endurance. In this paper, nonvolatile memory cells based on pseudo spin valve giant magnetoresistive (GMR) material are demonstrated. Comparison of spin value GMR cells and pseudo spin valve cells is discussed. Functional testing of pseudo spin valve devices is presented

Keywords

giant magnetoresistance; integrated circuit testing; integrated memory circuits; magnetic film stores; magnetic multilayers; random-access storage; spin valves; MRAM; Si; functional testing; giant magnetoresistive material/Si IC integration; magnetoresistive RAM; nonvolatile memory cells; nonvolatile memory technology; pseudo spin valve cells; pseudo spin valve devices; pseudo spin valve giant magnetoresistive material; pseudo spin valve magnetoresistive RAM; read/write endurance; spin value GMR cells; Giant magnetoresistance; Magnetic anisotropy; Magnetic fields; Magnetic films; Magnetic materials; Magnetic separation; Perpendicular magnetic anisotropy; Read-write memory; Saturation magnetization; Spin valves;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4518-5

Type

conf

DOI

10.1109/NVMT.1998.723216

Filename

723216