Title :
High density pseudo spin valve magnetoresistive RAM
Author :
Tehrani, Saied ; Durlam, Mark ; DeHerrera, Mark ; Chen, Eugene ; Calder, John ; Kerszykowski, Gloria
Author_Institution :
Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
Magnetoresistive RAM (MRAM), based on the integration of giant magnetoresistive material and Si ICs, is a nonvolatile memory technology which has unlimited read/write endurance. In this paper, nonvolatile memory cells based on pseudo spin valve giant magnetoresistive (GMR) material are demonstrated. Comparison of spin value GMR cells and pseudo spin valve cells is discussed. Functional testing of pseudo spin valve devices is presented
Keywords :
giant magnetoresistance; integrated circuit testing; integrated memory circuits; magnetic film stores; magnetic multilayers; random-access storage; spin valves; MRAM; Si; functional testing; giant magnetoresistive material/Si IC integration; magnetoresistive RAM; nonvolatile memory cells; nonvolatile memory technology; pseudo spin valve cells; pseudo spin valve devices; pseudo spin valve giant magnetoresistive material; pseudo spin valve magnetoresistive RAM; read/write endurance; spin value GMR cells; Giant magnetoresistance; Magnetic anisotropy; Magnetic fields; Magnetic films; Magnetic materials; Magnetic separation; Perpendicular magnetic anisotropy; Read-write memory; Saturation magnetization; Spin valves;
Conference_Titel :
Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4518-5
DOI :
10.1109/NVMT.1998.723216
