DocumentCode :
1978765
Title :
Design of a 10-bit CMOS image sensor based on an 8-bit configurable hold-and-go counter
Author :
Baek, Changsun ; Lim, Chaeyeol ; Kim, Daeyun ; Song, Minkyu
Author_Institution :
Dept. Semicond. Sci., Dongguk Univ. - Seoul, Seoul, South Korea
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
393
Lastpage :
397
Abstract :
In this paper, a 320×240 pixel, 80 frame/s CMOS image sensor with a low power dual correlated double sampling (CDS) scheme is presented. A novel 8-bit hold-and-go counter in each column is proposed to obtain a 10-bit resolution. Furthermore, dual CDS and a configurable counter scheme are also discussed to realize efficient power reduction. With these techniques, the digital counter consumes at least 43% and at most 61% less power compared with the column counter type, and the frame rate is approximately 40% faster than the double memories type due to a partial pipeline structure without additional memories. The prototype sensor was fabricated in a Samsung 0.13μm 1P4M CMOS process and used a 4T APS with a pixel pitch of 2.25μm. The measured column fixed pattern noise (FPN) is 0.10 LSB.
Keywords :
CMOS image sensors; analogue-digital conversion; counting circuits; 4T APS; CDS scheme; CMOS image sensor; Samsung 1P4M CMOS process; column counter type; column fixed pattern noise measurement; configurable hold-and-go counter; digital counter; double memories type; efficient power reduction; low power dual correlated double sampling scheme; partial pipeline structure; pixel pitch; size 0.13 mum; word length 10 bit; word length 8 bit; CMOS image sensors; Clocks; Image resolution; Noise; Power demand; Radiation detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
ISSN :
1930-8833
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
Type :
conf
DOI :
10.1109/ESSCIRC.2012.6341277
Filename :
6341277
Link To Document :
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