Design of a fully integrated CMOS self-testable RF power amplifier using a thermal sensor

Author

Deltimple, Nathalie ; González, José Luis ; Altet, Josep ; Luque, Yohann ; Kerhervé, Eric

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

398

Lastpage

401

Abstract

This paper presents a wideband RF power amplifier (PA) dedicated to 2GHz applications integrating a contact-less temperature sensor that allows on-chip observation and testing of the PA. Indeed, based on the static and dynamic local temperature changes caused by the PA operation, the thermal sensor can sense parameters such as output power or efficiency. This principle is applied to a 65nm CMOS PA with an OCP1 of 21dBm. We demonstrate that the output voltage of the thermal sensor follows the PA efficiency under single tone and multi-tone input signal conditions.

Keywords

CMOS analogue integrated circuits; power amplifiers; temperature sensors; wideband amplifiers; CMOS PA; PA testing; contact-less temperature sensor; dynamic local temperature; frequency 2 GHz; fully integrated CMOS self-testable RF power amplifier; multitone input signal condition; on-chip observation; output voltage; single tone input signal condition; size 65 nm; static local temperature; thermal sensor; wideband RF power amplifier; Frequency domain analysis; Power amplifiers; Radio frequency; System-on-a-chip; Temperature measurement; Temperature sensors; CMOS Power Amplifiers; RF Built-in Self Test; Thermal Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

ESSCIRC (ESSCIRC), 2012 Proceedings of the

Conference_Location

Bordeaux

ISSN

1930-8833

Print_ISBN

978-1-4673-2212-6

Electronic_ISBN

1930-8833

Type

conf

DOI

10.1109/ESSCIRC.2012.6341278

Filename

6341278