• DocumentCode
    1978811
  • Title

    A SiGe bipolar VCO for backhaul E-band communication systems

  • Author

    Padovan, Fabio ; Tiebout, Marc ; Mertens, Koen ; Bevilacqua, Andrea ; Neviani, Andrea

  • fYear
    2012
  • fDate
    17-21 Sept. 2012
  • Firstpage
    402
  • Lastpage
    405
  • Abstract
    A K-band SiGe bipolar VCO operating from 18.9 to 22.1 GHz is presented. The oscillator features a phase noise as low as -136.5 dBc/Hz at 10 MHz offset from the 22.1 GHz carrier while drawing 10 mA from the 3.3 V supply. The VCO shows a state-of-the-art FOM of -188dBc/Hz and an excellent FOMT of -192dBc/Hz. The oscillator is tailored to the communication systems operating in the higher portion of the E-band. It is intended to be followed by a frequency multiplier by four, reported elsewhere.
  • Keywords
    Ge-Si alloys; bipolar integrated circuits; microwave oscillators; voltage-controlled oscillators; K-band SiGe bipolar VCO; SiGe; backhaul E-band communication system; frequency 18.9 GHz to 22.1 GHz; frequency multiplier; phase noise; Frequency measurement; K-band; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC (ESSCIRC), 2012 Proceedings of the
  • Conference_Location
    Bordeaux
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4673-2212-6
  • Electronic_ISBN
    1930-8833
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2012.6341279
  • Filename
    6341279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1978811