DocumentCode :
1978811
Title :
A SiGe bipolar VCO for backhaul E-band communication systems
Author :
Padovan, Fabio ; Tiebout, Marc ; Mertens, Koen ; Bevilacqua, Andrea ; Neviani, Andrea
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
402
Lastpage :
405
Abstract :
A K-band SiGe bipolar VCO operating from 18.9 to 22.1 GHz is presented. The oscillator features a phase noise as low as -136.5 dBc/Hz at 10 MHz offset from the 22.1 GHz carrier while drawing 10 mA from the 3.3 V supply. The VCO shows a state-of-the-art FOM of -188dBc/Hz and an excellent FOMT of -192dBc/Hz. The oscillator is tailored to the communication systems operating in the higher portion of the E-band. It is intended to be followed by a frequency multiplier by four, reported elsewhere.
Keywords :
Ge-Si alloys; bipolar integrated circuits; microwave oscillators; voltage-controlled oscillators; K-band SiGe bipolar VCO; SiGe; backhaul E-band communication system; frequency 18.9 GHz to 22.1 GHz; frequency multiplier; phase noise; Frequency measurement; K-band; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
ISSN :
1930-8833
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
Type :
conf
DOI :
10.1109/ESSCIRC.2012.6341279
Filename :
6341279
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1978811
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