Top-down process of Germanium nanowires using EBL exposure of Hydrogen Silsesquioxane resist

Author

Yu, Ran ; Das, Samaresh ; Hobbs, Richard ; Georgiev, Yordan ; Ferain, Isabelle ; Razavi, Pedram ; Akhavan, Nima Dehdashti ; Colinge, Cynthia A. ; Colinge, Jean-Pierre

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2012

fDate

6-7 March 2012

Firstpage

145

Lastpage

148

Abstract

An initial top-down process of Germanium nanowires is developed in this work. The Silicon Nitride (Si₃N₄) is used as a hard mask to obtain a stable surface for lithography and a resistive mask for etch. The electron-beam lithography (EBL) is utilized for patterning the nanowires with Hydrogen Silsesquixane (HSQ) as a negative photoresist. Several different etch conditions are examined to transfer the patterns into the substrate.

Keywords

electron beam lithography; etching; germanium; hydrogen compounds; masks; nanowires; photoresists; silicon compounds; EBL exposure; Ge; HSQ; Si₃N₄; electron-beam lithography; etch condition; germanium nanowire; hard mask; hydrogen silsesquioxane resist; nanowires; negative photoresist; resistive mask; silicon nitride; top-down process; Electron-beam lithography; Germanium nanowires; Hydrogen Silsesquixane (HSQ); Nitride hard mask;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193378

Filename

6193378