DocumentCode :
1978872
Title :
28nm CMOS, energy efficient and variability tolerant, 350mV-to-1.0V, 10MHz/700MHz, 252bits frame error-decoder
Author :
Abouzeid, Fady ; Clerc, Sylvain ; Pelloux-Prayer, Bertrand ; Argoud, Fabrice ; Roche, Philippe
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
153
Lastpage :
156
Abstract :
A minimum design effort methodology to enable energy efficient and variability tolerant ultra-wide voltage-range frame error-decoder design in 28nm CMOS technology is presented. Critical aspects of a digital design development - standard cells, interface, clock tree and implementation - were optimized enabling 1.0V to 350mV functionality, 10x energy reduction, 10MHz to 700MHz frequency, and a reduction of the variability enabling industrial yield at ultra-low voltage. The same design was then ported to 28nm Fully-Depleted SOI (FDSOI), offering up-to 2x higher energy efficiency while validating the design methodology robustness.
Keywords :
CMOS integrated circuits; decoding; integrated circuit design; silicon-on-insulator; CMOS technology; FDSOI; Si; clock tree; digital design development; energy reduction; frequency 10 MHz to 700 MHz; fully-depleted SOI; size 28 nm; standard cell; ultrawide voltage-range frame error-decoder; voltage 350 mV to 1.0 V; word length 252 bit; CMOS integrated circuits; CMOS technology; Clocks; Delay; Libraries; Silicon; Standards;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
ISSN :
1930-8833
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
Type :
conf
DOI :
10.1109/ESSCIRC.2012.6341282
Filename :
6341282
Link To Document :
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