Title :
High Frequency Drain Noise in InAlAs/InGaAs/InP High Electron Mobility Transistors in Impact Ionization Regime
Author :
Wang, Hong ; Liu, Yuwei ; Radhakrishnan, K. ; Ng, Geok Ing
Keywords :
Degradation; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise measurement; Performance analysis; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634105
