DocumentCode :
1978902
Title :
On the use of nanoelectronic logic cells based on metallic Single Electron Transistors
Author :
Bounouar, Mohamed Amine ; Beaumont, Arnaud ; Calmon, Francis ; Drouin, Dominique
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Sherbrooke, Sherbrooke, QC, Canada
fYear :
2012
fDate :
6-7 March 2012
Firstpage :
157
Lastpage :
160
Abstract :
Single Electron Transistors have the potential to be a very promising candidate for future computing architectures due to their low voltage operation and low power consumption. In this paper, for the first time, logic cells based on metallic SET operating at room temperature and up to 125 °C were designed. An evaluation of the energy consumption and a comparison with their equivalents in CMOS technology has been made. Based on results using accurate SET model, SET-based logic cells provide a significant consumption reduction as compared with their CMOS counterparts.
Keywords :
CMOS logic circuits; MOSFET; integrated circuit design; logic design; low-power electronics; nanoelectronics; single electron transistors; CMOS technology; computing architecture; energy consumption evaluation; low power consumption; low voltage operation; metallic SET; metallic single electron transistor; nanoelectronic logic cell; temperature 293 K to 298 K; CMOS integrated circuits; CMOS technology; Computer architecture; Integrated circuit modeling; Logic gates; Power demand; Semiconductor device modeling; Hybrid SET-CMOS architectures; Low power consumption; Metallic Single Electron Transistor (SET); Nanoelectronic logic cells; Room Temperature Operation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
Type :
conf
DOI :
10.1109/ULIS.2012.6193381
Filename :
6193381
Link To Document :
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