0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers
Author :
Lai, R. ; Huang, P. ; Grundbacher, R. ; Farkas, D. ; Cavus, A. ; Liu, P.H. ; Chin, P. ; Chou, Y.C. ; Barsky, M. ; Tsai, R. ; Raja, R. ; Oki, A.
fYear :
2006
fDate :
7-11 May 2006
Firstpage :
39
Lastpage :
41
Keywords :
Breakdown voltage; Electron mobility; Frequency; HEMTs; Indium phosphide; Intrusion detection; MMICs; Power amplifiers; Power generation; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
