DocumentCode
1978945
Title
Effect of Nonlinear Avalanche Process in Impatts
Author
Tiwari, S.C. ; Khokle, W.S. ; Sisodia, M.L.
Author_Institution
Solid State Devices Division, Central Electronics Engineering Research Institute, Pilani - 333031 (India)
fYear
1980
fDate
8-12 Sept. 1980
Firstpage
507
Lastpage
511
Abstract
An intrinsic limitation en maximum rf modulation has been shown to arise in the avalanche region of the diode. Narrow avalanche region diodes can have high rf modulation and hence high efficiencies. The nonlinearity of ionization process gives rise to a new rectification effect termed as ´abnormal rectification´ for small values of avalanche region widths which should make such diodes to be free from rf tuning induced burnout.
Keywords
Charge carrier processes; Current density; Diodes; Doping profiles; Equations; Gallium arsenide; Impact ionization; Semiconductor process modeling; Signal analysis; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1980. 10th European
Conference_Location
Warszawa, Poland
Type
conf
DOI
10.1109/EUMA.1980.332849
Filename
4131535
Link To Document