Title :
Effect of Nonlinear Avalanche Process in Impatts
Author :
Tiwari, S.C. ; Khokle, W.S. ; Sisodia, M.L.
Author_Institution :
Solid State Devices Division, Central Electronics Engineering Research Institute, Pilani - 333031 (India)
Abstract :
An intrinsic limitation en maximum rf modulation has been shown to arise in the avalanche region of the diode. Narrow avalanche region diodes can have high rf modulation and hence high efficiencies. The nonlinearity of ionization process gives rise to a new rectification effect termed as ´abnormal rectification´ for small values of avalanche region widths which should make such diodes to be free from rf tuning induced burnout.
Keywords :
Charge carrier processes; Current density; Diodes; Doping profiles; Equations; Gallium arsenide; Impact ionization; Semiconductor process modeling; Signal analysis; Space charge;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332849
