Comparison between <100> and <110> oriented channels in highly strained FDSOI nMOSFETs

Author

Morvan, Sylvain ; Andrieu, F. ; Cassé, M. ; Nguyen, P. ; Weber, O. ; Perreau, P. ; Tabone, C. ; Allain, F. ; Toffoli, A. ; Ghibaudo, G. ; Poiroux, T.

Author_Institution

CEA-LETI, Grenoble, France

fYear

2012

fDate

6-7 March 2012

Firstpage

173

Lastpage

176

Abstract

We fabricated highly stressed FDSOI nMOSFETs down to 18nm gate length. The impact of different stressors (CESL, STI) is studied for different device geometries and substrates orientation (<;100>; or <;110>;). We evidence that STI degrades wide devices of intermediate gate length (0.2μm<;L_G<;1μm) along <;100>; compared to <;110>; (-20% mobility) whereas short nMOSFETs are improved along <;100>; with a (1.6 GPa) tensile CESL (+15% mobility, +6% I_ON). The CESL-induced mobility enhancement can be reproduced rather well for the two channel orientations by the piezo-resistive model and an analytical model of the stress profile.

Keywords

MOSFET; piezoresistive devices; silicon-on-insulator; <;100>; oriented channels; <;110>; oriented channels; CESL stressor; STI stressor; contact etch stop layer; device geometries; fully depleted silicon-on-insulator; highly strained FDSOI nMOSFET; induced mobility enhancement; piezoresistive model; pressure 1.6 GPa; shallow trench isolation; size 18 nm; stress profile; substrates orientation; tensile CESL; Electron mobility; Logic gates; MOSFETs; Performance evaluation; Silicon; Stress; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4673-0191-6

Electronic_ISBN

978-1-4673-0190-9

Type

conf

DOI

10.1109/ULIS.2012.6193385

Filename

6193385