Title :
Comparison between <100> and <110> oriented channels in highly strained FDSOI nMOSFETs
Author :
Morvan, Sylvain ; Andrieu, F. ; Cassé, M. ; Nguyen, P. ; Weber, O. ; Perreau, P. ; Tabone, C. ; Allain, F. ; Toffoli, A. ; Ghibaudo, G. ; Poiroux, T.
Author_Institution :
CEA-LETI, Grenoble, France
Abstract :
We fabricated highly stressed FDSOI nMOSFETs down to 18nm gate length. The impact of different stressors (CESL, STI) is studied for different device geometries and substrates orientation (<;100>; or <;110>;). We evidence that STI degrades wide devices of intermediate gate length (0.2μm<;LG<;1μm) along <;100>; compared to <;110>; (-20% mobility) whereas short nMOSFETs are improved along <;100>; with a (1.6 GPa) tensile CESL (+15% mobility, +6% ION). The CESL-induced mobility enhancement can be reproduced rather well for the two channel orientations by the piezo-resistive model and an analytical model of the stress profile.
Keywords :
MOSFET; piezoresistive devices; silicon-on-insulator; <;100>; oriented channels; <;110>; oriented channels; CESL stressor; STI stressor; contact etch stop layer; device geometries; fully depleted silicon-on-insulator; highly strained FDSOI nMOSFET; induced mobility enhancement; piezoresistive model; pressure 1.6 GPa; shallow trench isolation; size 18 nm; stress profile; substrates orientation; tensile CESL; Electron mobility; Logic gates; MOSFETs; Performance evaluation; Silicon; Stress; Substrates;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-0191-6
Electronic_ISBN :
978-1-4673-0190-9
DOI :
10.1109/ULIS.2012.6193385
