• DocumentCode
    1978965
  • Title

    A 2-Watt X-Band FET and Impatt Diode Integrated Amplifier

  • Author

    Ho, Thomas Chen-Chou ; Fu, Shiang

  • Author_Institution
    Chung Shan Institute of Science and Technology, Taiwan 325, Republic of China.
  • fYear
    1980
  • fDate
    8-12 Sept. 1980
  • Firstpage
    517
  • Lastpage
    520
  • Abstract
    A practical design and performance of 2 watts, 800 MHz 1-dB bandwidth, GaAs FET and Silicon IMPATT diode integrated amplifier via MIC technique are presented.
  • Keywords
    Bandwidth; Broadband amplifiers; Diodes; Driver circuits; FETs; Frequency; Gain; Gallium arsenide; Power amplifiers; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1980. 10th European
  • Conference_Location
    Warszawa, Poland
  • Type

    conf

  • DOI
    10.1109/EUMA.1980.332851
  • Filename
    4131537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1978965