Title :
An instrumentation 128dB-SNR 750μA SDM
Author :
Guinea, J. ; Sentieri, E. ; Baschirotto, A.
Author_Institution :
STMicroelectron., Agrate Brianza, Italy
Abstract :
One of the largest SDM DR is achieved at low power consumption by means of several SC design solutions, like multi-bit topology, large OSR, improved switching scheme, chopper & NMOS input pair, accurate opamp design. In a 3.3V 0.35μm CMOS technology, 128dB-DR in a 250Hz bandwidth is achieved with 0.75mA current from a single 2.4mW supply for high-performance instrumentation application.
Keywords :
CMOS integrated circuits; network topology; sigma-delta modulation; CMOS technology; NMOS input pair; SC design; SDM DR; current 750 muA; instrumentation; large OSR; low power consumption; multibit topology; Abstracts; Zinc;
Conference_Titel :
ESSCIRC (ESSCIRC), 2012 Proceedings of the
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4673-2212-6
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2012.6341294
