DocumentCode
1979232
Title
Design of Power Amplifiers Using Stacked Topology
Author
Shen, Chih-Chun ; Huang, Fan-Hsiu ; Liang, Kung-Hao ; Chang, Hong-Yeh ; Chan, Yi-Jen ; Vendelin, George D.
Author_Institution
Electr. Eng., Nat. Central Univ., Jhongli
fYear
2007
fDate
11-14 Dec. 2007
Firstpage
1
Lastpage
4
Abstract
This paper presents the design considerations for a stacked transistor topology for power amplifier design. A HBT is used to show at 1 GHz the effect of bias, device size, and matching, including interstage matching, which has had no beneficial effect so far. Most important is the base capacitor termination of the top transistors.
Keywords
heterojunction bipolar transistors; network topology; power amplifiers; base capacitor termination; frequency 1 GHz; heterojunction bipolar transistors; interstage matching; power amplifier design; stacked transistor topology; Capacitors; Heterojunction bipolar transistors; Inductors; Microwave amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Stability; Topology; HBT; component; power amplifier; stacked topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location
Bangkok
Print_ISBN
978-1-4244-0748-4
Electronic_ISBN
978-1-4244-0749-1
Type
conf
DOI
10.1109/APMC.2007.4554963
Filename
4554963
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