Title :
Selectively Implanted Subcollector DHBTs
Author :
Parthasarathy, N. ; Griffith, Z. ; Kadow, C. ; Singisetti, U. ; Rodwell, M.J.W. ; Urteaga, M. ; Shinohara, K. ; Brar, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Abstract :
In0.53Ga0.47As/InP double heterojunction bipolar transistors with implanted subcollectors have been designed and fabricated to eliminate the base access pad capacitance. A blanket Fe implant eliminates the interface charge and a patterned Si implant creates an isolated N++ subcollector. The extrinsic base-collector capacitance Ccb associated with the base interconnect pad (-25% of the total Ccb) is thus eliminated. These implanted subcollector DHBTs have 363 GHz ft and 410 GHz fmax. The DC current gain beta ~ 40, BVceo = 5.6 V, BVcbo = 6.9 V (Ic = 1 mA)
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; ion implantation; iron; semiconductor doping; silicon; 1 mA; 363 GHz; 410 GHz; 5.6 V; 6.9 V; DC current gain; Fe; In0.53Ga0.47As-InP; In0.53Ga0.47As/InP double heterojunction bipolar transistors; Si; base access pad capacitance; base interconnect pad; base-collector capacitance; blanket Fe implant; interface charge; patterned Si implant; subcollector DHBT; Bandwidth; Delay; Double heterojunction bipolar transistors; Feeds; Heterojunction bipolar transistors; Implants; Indium phosphide; Iron; Parasitic capacitance; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634122
