Title :
High Performance P-doped InAs Tunnel Injection Quantum Dash Lasers on InP
Author :
Mi, Z. ; Yang, J. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Abstract :
We have investigated the molecular beam epitaxial growth and characteristics of p-doped InAs tunnel injection quantum dash lasers on InP (001) substrates. Significantly improved photoluminescence intensity and narrow linewidth (~ 50 meV) are measured from multiple InAs quantum dash layers grown under optimized conditions. The lasers are characterized by very large T0 (204 K), large modulation bandwidth (f-3B = 12 GHz), and near-zero alpha-parameter and very low chirp (~ 0.3 Aring)
Keywords :
III-V semiconductors; chirp modulation; indium compounds; molecular beam epitaxial growth; optical modulation; photoluminescence; quantum dot lasers; semiconductor doping; semiconductor growth; spectral line narrowing; 12 GHz; 204 K; InAs; InAs tunnel injection quantum dash lasers; InP; InP substrates; modulation bandwidth; molecular beam epitaxial growth; narrow linewidth; p-doping; photoluminescence; Bandwidth; Chirp modulation; Indium phosphide; Laser theory; Molecular beam epitaxial growth; Potential well; Quantum dot lasers; Quantum dots; Quantum well lasers; Solid lasers;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634124
