Title :
High Voltage Operation of Power GaAs FET Amplifiers
Author :
Vavken, Werner ; Hsieh, Chi
Abstract :
This paper describes a 7 GHz GaAs FET power amplifier operating with -2lV D.C. power supply without DC-DC converter or voltage dropping resistor. The amplifier is to be used as a direct replacement of an Injection Locked Amplifier in a 7 GHz video microwave radio. Direct series connection of two power GaAs FETs is used to achieve a high voltage operating condition, the details of circuit design and amplifier performance is presented.
Keywords :
DC-DC power converters; Gallium arsenide; High power amplifiers; Microwave FETs; Microwave amplifiers; Operational amplifiers; Power amplifiers; Power supplies; Resistors; Voltage;
Conference_Titel :
Microwave Conference, 1980. 10th European
Conference_Location :
Warszawa, Poland
DOI :
10.1109/EUMA.1980.332881
