DocumentCode
1979342
Title
Experimental and Theoretical Investigations on Spectral Gain Bandwidth of Broadband (>300 nm) InP based Quantum Dash Material
Author
Somers, A. ; Kaiser, W. ; Reithmaier, J.P. ; Forchel, A. ; Gioaninni, M. ; Montrosset, I.
Author_Institution
Tech. Physik, Wurzburg Univ.
fYear
0
fDate
0-0 0
Firstpage
119
Lastpage
122
Abstract
A spectral gain bandwidth >300 nm is experimentally and theoretically confirmed on an InP based QDash material. Processed DFB lasers show single mode emission (SMSR > 39 dB) over 100 nm on one chip bar
Keywords
III-V semiconductors; distributed feedback lasers; indium compounds; laser modes; optical materials; quantum dot lasers; semiconductor quantum dots; DFB lasers; InP; InP-based quantum dash material; single mode emission; spectral gain bandwidth; Bandwidth; Gain measurement; Indium phosphide; Laser modes; Laser theory; Laser tuning; Optical materials; Quantum dots; Semiconductor lasers; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location
Princeton, NJ
Print_ISBN
0-7803-9558-1
Type
conf
DOI
10.1109/ICIPRM.2006.1634126
Filename
1634126
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