Title :
Experimental and Theoretical Investigations on Spectral Gain Bandwidth of Broadband (>300 nm) InP based Quantum Dash Material
Author :
Somers, A. ; Kaiser, W. ; Reithmaier, J.P. ; Forchel, A. ; Gioaninni, M. ; Montrosset, I.
Author_Institution :
Tech. Physik, Wurzburg Univ.
Abstract :
A spectral gain bandwidth >300 nm is experimentally and theoretically confirmed on an InP based QDash material. Processed DFB lasers show single mode emission (SMSR > 39 dB) over 100 nm on one chip bar
Keywords :
III-V semiconductors; distributed feedback lasers; indium compounds; laser modes; optical materials; quantum dot lasers; semiconductor quantum dots; DFB lasers; InP; InP-based quantum dash material; single mode emission; spectral gain bandwidth; Bandwidth; Gain measurement; Indium phosphide; Laser modes; Laser theory; Laser tuning; Optical materials; Quantum dots; Semiconductor lasers; Semiconductor materials;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634126
