Title :
High T/sub 0/ operation OF 1590 nm GaInAsP/InP quantum-wire DFB lasers by Bragg wavelength detuning
Author :
Nishimoto, Yoshifumi ; Yagi, Hideki ; Miura, Koji ; Plumwongrot, Dhanorm ; Ohira, Kazuya ; Maruyama, Takeo ; Arai, Shigehisa
Author_Institution :
Tokyo Inst. of Technol.
Abstract :
By adopting the Bragg wavelength detuning from the gain peak wavelength of active regions, the characteristic temperature for threshold current of 95 K and that for the differential quantum efficiency of 243 K were obtained for 20 to 80degC temperature range
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wires; thermo-optical effects; 1590 nm; 20 to 80 degC; 243 K; 95 K; Bragg wavelength detuning; DFB lasers; GaInAsP-InP; GaInAsP/InP lasers; differential quantum efficiency; high temperature operation; quantum-wire lasers; Distributed Bragg reflectors; Distributed feedback devices; Etching; Indium phosphide; Laser feedback; Optical device fabrication; Quantum well lasers; Temperature distribution; Threshold current; Wire;
Conference_Titel :
Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-9558-1
DOI :
10.1109/ICIPRM.2006.1634127
